Document
BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 2 October 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible
1.3 Applications
I Automotive ABS systems I Motors, lamps and solenoids I Diesel injection systems I Automotive transmission control I Fuel pump and injection I Airbag
1.4 Quick reference data
I EDS(AL)S ≤ 91 mJ I ID ≤ 55 A I RDSon = 11 mΩ (typ) I Ptot ≤ 75 W
2. Pinning information
Table 1. Pin 4 mb Pinning Description gate (G) mounting base; connected to drain (D)
G
Simplified outline
mb
Symbol
D
1, 2, 3 source (S)
1 2 3 4
mbl798
S1 S2 S3
SOT669 (LFPAK)
NXP Semiconductors
BUK7Y13-40B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information Package Name BUK7Y13-40B LFPAK Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM EDS(AL)S Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature reverse drain current peak reverse drain current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs Unclamped inductive load; ID = 55 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting at Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 RGS = 20 kΩ Conditions Min Max 40 40 ±20 55 38 220 75 Unit V V V A A A W
−55 +175 °C −55 +175 °C 55 220 91 A A mJ
Source-drain diode
Avalanche ruggedness
EDS(AL)R
-
[1]
-
[1]
Conditions: a) Maximum value not quoted. Repetitive rating defined in Figure 16. b) Single-pulse avalanche rating limited by Tj(max) of 175 °C. c) Repetitive avalanche rating limited by an average junction temperature of 170 °C. d) Refer to application note AN10273 for further information.
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
2 of 12
NXP Semiconductors
BUK7Y13-40B
N-channel TrenchMOS standard level FET
120 Pder (%) 80
003aab844
60 ID (A) 40
003aab217
40
20
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature
103 ID (A) 102 Limit RDSon = VDS / ID
VGS ≥ 10 V
Fig 2. Continuous drain current as a function of mounting base temperature
003aab218
tp = 10 µs 100 µs
10 DC 1 1 ms 10 ms 100 ms
10−1 1 10 VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
3 of 12
NXP Semiconductors
BUK7Y13-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4: Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 2 Unit K/W thermal resistance from junction to mounting base -
1 Zth(j−mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 0.05 0.02
tp T P
003aab219
δ=
tp T
t
single pulse 10−2 10−6 10−5 10−4 10−3 10−2 10−1
1 tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y13-40B_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 October 2007
4 of 12
NXP Semiconductors
BUK7Y13-40B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol V(BR)DSS Parameter Conditions Min Typ Max Unit Static characteristics drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain leakage current VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate leakage current VGS = ±20 V; VDS = 0 V Tj = 25 °C Tj = 175 °C Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; see Figure 15 IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 30 V VDS = 30 V; RL = 2.5 Ω; VGS = 10 V; RG = 10 Ω VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 ID = 10 A; VDS = 32 V; VGS = 10 V; see Figure 14 19 6 5.1 98.