BUK9Y14-40B

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ Air bag „ Automotive transmission control „ Fuel pump and injection „ Automotive ABS systems „ Diesel injection systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot QGD Quick reference Parameter drain-source voltage drain current total power dissipation gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 4 and 1 Tmb = 25 °C; see Figure 2 VGS = 5 V; ID = 10 A; VDS = 32 V; see Figure 14 VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12 and 13 ID = 56 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ 9 Max 40 56 85 Unit V A W nC Dynamic characteristics Static characteristics RDSon drain-source on-state resistance 12 14 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 89 mJ NXP Semiconductors BUK9Y14-40B N-channel Tre...