BUK763R9-60E

BUK763R9-60E 13 July 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 60 100 263 Unit V A W Static characteristics drain-source on-state resistance 2.94 3.9 mΩ Dynamic characteristics QGD gate-drain charge 33 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK763R9-60E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol...