BUK9Y07-30B

BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 30 75 105 V A W Static characteristics RDSon VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C Avalanche ruggedness 4.9 7 mΩ - 4 6 mΩ NXP Semiconductors BUK9Y07-30B N-channel TrenchMOS logic level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 198 mJ non-repetitive ID = 75 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 5 V...