SEMiX241DH16s

SEMiX241DH16s Absolute Maximum Ratings Symbol Chip ID ITSM i2t Tj = 130 °C sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 240 200 2250 1900 25300 18000 1700 1600 1600 Tj = 130 °C Tj = 130 °C 100 1000 -40 ... 130 -40 ... 125 AC sinus 50Hz 1 min 1s 4000 4800 A A A A A²s A²s V V V A/µs V/µs °C °C V V Conditions Values Unit SEMiX® 13 VRSM VRRM VDRM (di/dt)cr Bridge Rectifier Module (halfcontrolled) SEMiX241DH16s Features Terminal height 17 mm Chips soldered directly to isolated substrate UL recognised file no. E63532 (dv/dt)cr Tj Module Tstg Visol Characteristics Symbol Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Module Rth(c-s) Ms Mt a w 350 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.04 5 5 5 * 9,81 K/W K/W Nm Nm m/s² g Tj = 25 °C, IT = 300 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33  Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. sin. 180° per thyristor per diode 3 150 0.25 6 0.32 0.32 1 2 150 150 300 250 600 1.9 0.85 4 24 V V m mA µs µs µs mA mA V mA V mA K/W K/W Conditions min. typ. max. Unit Typical Applications* Input Bridge Rectifier for AC/DC motor control Power supply DH © by SEMIKRON Rev. 3 – 20.03.2013 1 SEMiX241DH16s Fig. 4L: Power dissipation per module vs. direct current Fig. 4R: Power dissipation per module vs....