SEMiX291D16s

SEMiX291D16s Absolute Maximum Ratings Symbol ID IFSM i2t Conditions Tj = 150 °C sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 232 196 1600 1380 12800 9522 1700 1600 -40 ... 150 -40 ... 125 Unit A A A A A²s A²s V V °C °C V V Recitifier Diode SEMiX® 13 VRSM VRRM Tj Module Tstg Visol AC sinus 50Hz 1 min 1s Bridge Rectifier Module (uncontrolled) SEMiX291D16s Features Terminal height 17 mm Chips soldered directly to isolated substrate UL recognised file no. E63532 4000 4800 Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.04 5 5 5 * 9,81 350 K/W K/W Nm Nm m/s² g Tj = 25 °C, IF = 231 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM sin. 180 per diode 2.09 0.83 4.6 1.1 0.45 V V mΩ mA K/W K/W Conditions min. typ. max. Unit Typical Applications* Input Bridge Rectifier for AC/DC motor control Power supply D © by SEMIKRON Rev. 2 – 05.02.2014 1 SEMiX291D16s Fig. 4L: Power dissipation per module vs. direct current Fig. 4R: Power dissipation per module vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 2 Rev. 2 – 05.02.2014 © by SEMIKRON SEMiX291D16s spring configuration SEMiX 13 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our compone...