Rectifier Thyr./Diode Module
SEMiX302KH16s
Absolute Maximum Ratings Symbol
Chip IT(AV) ITSM i2t sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25...
Description
SEMiX302KH16s
Absolute Maximum Ratings Symbol
Chip IT(AV) ITSM i2t sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 300 230 9300 8000 432000 320000 1700 1600 1600 Tj = 130 °C Tj = 130 °C 130 1000 -40 ... 130 -40 ... 125 AC sinus 50Hz 1 min 1s 4000 4800 A A A A A2s A2s V V V A/µs V/µs °C °C V V
Conditions
Values
Unit
SEMiX 2s
®
VRSM VRRM VDRM (di/dt)cr
Rectifier Thyr./Diode Module SEMiX302KH16s
(dv/dt)cr Tj Module Tstg
Features
Terminal height 17 mm Chips soldered directly to isolated substrate
Visol
Characteristics Symbol
Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5 * 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IT = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33 Ω Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. per thyristor per module sin. 180° per thyristor per module per thyristor per module 0.091 0.091 3 200 0.25 10 1 2 150 150 300 500 1000 1.7 0.85 1.1 75 V V mΩ mA µs µs µs mA mA V mA V mA K/W K/W K/W K/W K/W K/W
Typical Applications*
Input Bridge Rectifier for AC/DC motor control Power supply
Conditions
min.
typ.
max.
Unit
KH © by SEMIKRON Rev. 34 – 25.03.2010 1
SEMiX302KH16s
Fig. 1L: Power dissipation per thyristor/diode vs. o...
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