Document
NPN SILICON RF TRANSISTOR
NE66219 / 2SC5606
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
• Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
ORDERING INFORMATION
Part Number NEC66219 2SC5606 NE66219-T1 2SC5606-T1 Order Number NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A Package 3-pin ultra super minimold (19, 1608 PKG) (Pb-Free) 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Quantity 50 pcs (Non reel) Supplying Form • 8 mm wide embossed taping
Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 15 3.3 1.5 35 115 150 65 to +150
Unit V V V mA mW C C
Tj Tstg
Note Mounted on 1.08 cm 2 1.0 mm (t) glass epoxy substrate
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10781EJ01V0DS (1st edition) (Previous No. P14658EJ3V0DS00) Date Published August 2009 NS
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NE66219 / 2SC5606
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain fT S21e NF Cre
Note 2 Note 3 Note 4 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 5 mA
– – 60
– – 80
200 200 100
nA nA –
VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz
– 10 – – – –
21 12.5 1.2 0.21 14 15
– – 1.5 0.3 – –
GHz dB dB pF dB dB
MAG MSG
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = 4. MSG = S21 (K – (K2 – 1) ) S12 S21 S12
hFE CLASSIFICATION
Rank Marking hFE FB/YFB UA 60 to 100
2
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, T A = +25C)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10781EJ01V0DS
3
NE66219 / 2SC5606
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
Remark The graph indicates nominal characteristics.
S-PARAMETERS
Data Sheet PU10781EJ01V0DS
5
NE66219 / 2SC5606
PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
6
Data Sheet PU10781EJ01V0DS
.