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NE66219 Dataheets PDF



Part Number NE66219
Manufacturers California Eastern Labs
Logo California Eastern Labs
Description NPN SILICON RF TRANSISTOR
Datasheet NE66219 DatasheetNE66219 Datasheet (PDF)

NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package ORDERING INFORMATION Part Number NEC66219 2SC5606 NE66219-T1 2SC5606-T1 Order Number NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A Package 3-pin ultra super minimold (19, 1608 PKG) (Pb-Free) 3 kpcs/reel • P.

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NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package ORDERING INFORMATION Part Number NEC66219 2SC5606 NE66219-T1 2SC5606-T1 Order Number NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A Package 3-pin ultra super minimold (19, 1608 PKG) (Pb-Free) 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Quantity 50 pcs (Non reel) Supplying Form • 8 mm wide embossed taping Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 35 115 150 65 to +150 Unit V V V mA mW C C Tj Tstg Note Mounted on 1.08 cm 2  1.0 mm (t) glass epoxy substrate Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10781EJ01V0DS (1st edition) (Previous No. P14658EJ3V0DS00) Date Published August 2009 NS The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NE66219 / 2SC5606 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain fT S21e NF Cre Note 2 Note 3 Note 4 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 5 mA – – 60 – – 80 200 200 100 nA nA – VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz – 10 – – – – 21 12.5 1.2 0.21 14 15 – – 1.5 0.3 – – GHz dB dB pF dB dB MAG MSG Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2% 2. Collector to base capacitance when the emitter grounded 3. MAG = 4. MSG = S21 (K –  (K2 – 1) ) S12 S21 S12 hFE CLASSIFICATION Rank Marking hFE FB/YFB UA 60 to 100 2 Data Sheet PU10781EJ01V0DS NE66219 / 2SC5606 TYPICAL CHARACTERISTICS (Unless otherwise specified, T A = +25C) Remark The graphs indicate nominal characteristics. Data Sheet PU10781EJ01V0DS 3 NE66219 / 2SC5606 Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10781EJ01V0DS NE66219 / 2SC5606 Remark The graph indicates nominal characteristics. S-PARAMETERS Data Sheet PU10781EJ01V0DS 5 NE66219 / 2SC5606 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 6 Data Sheet PU10781EJ01V0DS .


NE5531079A NE66219 NE2SC5606


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