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D1670

Inchange Semiconductor
Part Number D1670
Manufacturer Inchange Semiconductor
Description 2SD1670
Published Aug 13, 2014
Detailed Description com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD...
Datasheet PDF File D1670 PDF File

D1670
D1670

Overview
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.
) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.
5V(Max)@ IC= 10A APPLICATIONS ·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ w w s c s i .
w VALUE 150 100 8 ±10 ±20 1 3.
5 UNIT V n c .
...


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