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SSG4902NA

SeCoS Halbleitertechnologie

Dual N-Channel Mode Power MOSFET

SSG4902NA Elektronische Bauelemente 6.4 A, 60 V, RDS(ON) 41 mΩ Dual N-Channel Mode Power MOSFET RoHS Compliant Product ...


SeCoS Halbleitertechnologie

SSG4902NA

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Description
SSG4902NA Elektronische Bauelemente 6.4 A, 60 V, RDS(ON) 41 mΩ Dual N-Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards,cellular and cordless telephones. SOP-8 B L D M A C N J K FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S G D D D D MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings 60 ±20 6.4 5.2 40 2 2.1 1.3 -55 ~ 150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range Thermal Resistance Ratings Therma...




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