SUM1960NE

Elektronische Bauelemente SUM1960NE 0.32A , 60V , RDS(ON) 2 Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SOT-363 3K Leader Size 7 inch SOT-363 A E L B F C H DG K J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.10 1.50 0.10 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.650 TYP. ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 TA=25°C ID TA=70°C Pulsed Drain Current 2 IDM Continuous Source Current (Diode Conduction) 1 IS Power Dissipation 1 TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 5 sec Steady State Notes: 1. Surface Mounted on 1” x ...