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SSG8N10

Part Number	SSG8N10
Manufacturer	SeCoS Halbleitertechnologie
Description	N-Ch Enhancement Mode Power MOSFET
Published	Aug 12, 2014
Detailed Description	SSG8N10 Elektronische Bauelemente 8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A s...
Datasheet	SSG8N10 PDF File

Overview

SSG8N10 Elektronische Bauelemente 8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
B SOP-8 L D M FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available H G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
A C N J K F Millimeter E MARKING 8N10SC Date Code REF.
A B C D E F...

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SSG8N10 N-Ch Enhancement Mode Power MOSFET - SeCoS Halbleitertechnologie

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