SSG4530C

SSG4530C Elektronische Bauelemente N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J H G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. K F E REF. A B C D E F G REF. H J K L M N APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. Top View PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C ID TA = 70° C IDM IS PD TA = 70° C N-CH 30 ±20 5.3 4.2 20 1.3 2.1 1.3 P-CH -30 ±20 -5.2 -4.1 -20 -1.3 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C Operating Junction & Storage...