Document
SSG10N10
Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
B
SOP-8
L
D M
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
H G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP.
A
C N J
K
F
Millimeter
E
MARKING
10N10SC
Date Code
REF. A B C D E F G
REF. H J K L M N
Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
PACKAGE INFORMATION
Package SOP-8 MPQ 3K Leader Size 13 inch
S S S G
D D D D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 4 1
Symbol
VDS VGS TA=25° C TA=70° C IDM PD EAS IAS TJ, TSTG ID
Rating
100 ±20 10 7.5 50 1.6 98 41 -55~150
Unit
V V A A A W mJ A ° C
Total Power Dissipation @ TA=25° C Single Pulse Avalanche Energy Single Pulse Avalanche Current
3
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
1
RθJA
80
° C /W
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Any changes of specification will not be informed individually.
25-Apr-2013 Rev. A
Page 1 of 4
SSG10N10
Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter Symbol Min. Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current TJ=25° C Drain-Source Leakage Current TJ=55° C Static Drain-Source On-Resistance Total Gate Charge
2 2
Typ.
Max.
Unit
Teat Conditions
BVDSS VGS(th) IGSS IDSS
100 2.5 -
27.6 11.4 7.9 15.6 17.2 16.8 9.2 1890 268 67
4.5 ±100 1
V V nA µA
VGS=0, ID= 250µA VDS=VGS, ID=250µA VGS= ±20V V DS=80V, VGS=0 VDS=80V, VGS=0 VGS=10V, ID=10A
5 21 mΩ 30 nS pF nC
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss -
VGS=7V, ID=6A ID=7A VDS=80V VGS=10V
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
VDS=50V ID=7A VGS=10V RL=3.3 Ω
VGS =0 VDS=15V f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy
5
EAS
53
-
-
mJ
VDD=25V, L=0.1mH, IAS=30A
Source-Drain Diode
Diode Forward Voltage
2 1,6
VSD IS ISM Trr Qrr
-
34 47
1.2 10 50 -
V A
IS=1A, VGS=0, TJ=25° C VD=VG=0, Force Current
Continuous Source Current Pulsed Source Current
2,6
A nS nC IF=7A, dI/dt=100A/µs , TJ=25° C
Reverse Recovery Time Reverse Recovery Charge
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 125℃/W when mounted .