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SSG10N10 Dataheets PDF



Part Number SSG10N10
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Datasheet SSG10N10 DatasheetSSG10N10 Datasheet (PDF)

SSG10N10 Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . B SOP-8 L D M FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100.

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SSG10N10 Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . B SOP-8 L D M FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. A C N J K F Millimeter E MARKING 10N10SC Date Code REF. A B C D E F G REF. H J K L M N Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 3K Leader Size 13 inch S S S G D D D D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 4 1 Symbol VDS VGS TA=25° C TA=70° C IDM PD EAS IAS TJ, TSTG ID Rating 100 ±20 10 7.5 50 1.6 98 41 -55~150 Unit V V A A A W mJ A ° C Total Power Dissipation @ TA=25° C Single Pulse Avalanche Energy Single Pulse Avalanche Current 3 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 RθJA 80 ° C /W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Apr-2013 Rev. A Page 1 of 4 SSG10N10 Elektronische Bauelemente 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current TJ=25° C Drain-Source Leakage Current TJ=55° C Static Drain-Source On-Resistance Total Gate Charge 2 2 Typ. Max. Unit Teat Conditions BVDSS VGS(th) IGSS IDSS 100 2.5 - 27.6 11.4 7.9 15.6 17.2 16.8 9.2 1890 268 67 4.5 ±100 1 V V nA µA VGS=0, ID= 250µA VDS=VGS, ID=250µA VGS= ±20V V DS=80V, VGS=0 VDS=80V, VGS=0 VGS=10V, ID=10A 5 21 mΩ 30 nS pF nC RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - VGS=7V, ID=6A ID=7A VDS=80V VGS=10V Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 VDS=50V ID=7A VGS=10V RL=3.3 Ω VGS =0 VDS=15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 53 - - mJ VDD=25V, L=0.1mH, IAS=30A Source-Drain Diode Diode Forward Voltage 2 1,6 VSD IS ISM Trr Qrr - 34 47 1.2 10 50 - V A IS=1A, VGS=0, TJ=25° C VD=VG=0, Force Current Continuous Source Current Pulsed Source Current 2,6 A nS nC IF=7A, dI/dt=100A/µs , TJ=25° C Reverse Recovery Time Reverse Recovery Charge Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 125℃/W when mounted .


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