SKM50GAL12T4

SKM50GAL12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 81 62 50 150 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 65 49 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 270 -40 ... 175 Tc = 25 °C Tc = 80 °C 65 49 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 270 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 200 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 2 Fast IGBT4 Modules SKM50GAL12T4 Features IGBT4 = 4. generation fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* Electronic welders at fsw up to 20 kHz DC/DC – converter Brake chopper Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint Conditions IC = 50 A VGE = 15 V chiplevel chiplevel VGE = 15 V ch...