IGBT
SKM300GAR12E4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 ...
Description
SKM300GAR12E4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 422 324 300 900 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 353 264 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1548 -40 ... 175 Tc = 25 °C Tc = 80 °C 353 264 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1548 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V
Conditions
Values
Unit
SEMITRANS® 3
IGBT4 Modules
SKM300GAR12E4 Features
IGBT4 = 4. generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 12kHz UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj
Inverse diode Tj = 175 °C
Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C
Typical Applications*
DC/DC – converter Brake chopper Switched reluctance motor
Remarks
Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint
Conditions
IC = 300 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1...
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