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SGP30N60 Dataheets PDF



Part Number SGP30N60
Manufacturers Infineon
Logo Infineon
Description Fast IGBT
Datasheet SGP30N60 DatasheetSGP30N60 Datasheet (PDF)

SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS.

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SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP30N60 SGW30N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C Ptot 250 W tSC 10 µs VGE EAS ±20 165 V mJ ICpuls Symbol VCE IC 41 30 112 112 Value 600 Unit V A VCE 600V 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150°C 150°C Marking G30N60 G30N60 Package PG-TO-220-3-1 PG-TO-247-3 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov. 09 SGP30N60 SGW30N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.5 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 50 0 µ A VCE(sat) V G E = 15V, I C = 30A T j = 25 ° C T j = 15 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 µ A, V C E = V G E V C E = 600V , V G E = 0V T j = 25 ° C T j = 15 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2.1 2.5 4 20 1600 150 92 140 7 13 300 max. 2.4 3.0 5 Unit V µA 40 3000 100 1920 180 110 182 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E = 2 0V V C E = 20V, I C = 30A V C E = 25V, V G E = 0V, f = 1 M Hz V C C = 4 80V, I C = 30A V G E = 1 5V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 1 5V, t S C ≤ 10 µ s V C C ≤ 600V, T j ≤ 150 ° C 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.5 Nov. 09 SGP30N60 SGW30N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 ° C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 11Ω , L σ 1 ) = 18 0n H , C σ 1 ) = 90 0p F Energy losses include “tail” and diode reverse recovery. 44 34 291 58 0.64 0.65 1.29 53 40 349 70 0.77 0.85 1.62 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 ° C V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 11 Ω , L σ 1 ) = 18 0n H , C σ 1 ) = 90 0p F Energy losses include “tail” and diode reverse recovery. 44 34 324 67 0.98 0.92 1.90 53 40 389 80 1.18 1.19 2.38 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.5 Nov. 09 SGP30N60 SGW30N60 160A 140A 120A Ic 100A tp=4µs 15µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 100A 80A TC=80°C 60A 40A 20A 0A 10Hz TC=110°C 10A 50µs 200µs 1ms 1A DC Ic 0.1A 1V 10V 100V 100Hz 1kHz 10kHz 100kHz 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 300W 60A 250W 50A Limited by bond wire 200W IC, COLLECTOR CURRENT 50°C 75°C 100°C 125°C POWER DISSIPATION 40A 150W 30A 100W 20A Ptot, 50W 10A 0W 25°C 0A 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.5 Nov. 09 SGP30N60 SGW30N60 90A 80A 70A 90A 80A 70A IC, C.


TA2160FN SGP30N60 SGW30N60


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