N and P-Ch Enhancement Mode Power MOSFET
SDG5521C
Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mo...
Description
SDG5521C
Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DFN2*3
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2*3 saves board space. Fast switching speed. High performance trench technology.
REF. A B C D E
PACKAGE INFORMATION
Package DFN2*3 MPQ 3K Leader Size 13’ inch
Millimeter Min. Max. 3.00 BSC. 1.70 BSC. 0.70 0.90 0.65 BSC. 0.08 0.25
REF. F G H I
Millimeter Min. Max. 0.24 0.35 2.00 BSC. 0.20 0.40 0 0.15
Top View
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG
Rating
N-CH 20 ±8 5 4.1 8 4.5 2.1 1.3 -55 ~ 150 P-CH -20 ±8 -4.7 -3.9 -8 -4.5
Unit
V V A A A A W W ° C
Continuous Source Current (Diode Conduction) Total Power Dissipation
1
TA = 25° C TA = 70° C
Operating Junction & Storage Temperature Range
Thermal Resistance Rating...
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