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SSRF12N65SL Dataheets PDF



Part Number SSRF12N65SL
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Datasheet SSRF12N65SL DatasheetSSRF12N65SL Datasheet (PDF)

SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect de.

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SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4 L REF. A B C D E F G 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy 1 Symbol VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD Rating 650 ±30 12 9 48 51 0.41 786 -55~150 Unit V V A A A W mJ ° C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=6.66A, VDD=140V, RG=25Ω, Starting TJ =25° C RθJA RθJC 120 2.44 ° C /W ° C /W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Nov-2013 Rev. A Page 1 of 5 SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Total Gate Charge 1.2 1.2 Typ. Max. Unit Teat Conditions BVDSS VGS(th) IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr 650 2 - 0.64 24.15 7.86 7.47 37.67 61.67 80.33 46.67 1476 152 4.5 4 ±100 1 0.8 - V V nA µA Ω VGS=0, ID= 250µA VDS=VGS, ID=250µA VGS= ±30V VDS=650V, VGS=0 VGS=10V, ID=6A ID=12A VDS=520V VGS=10V Gate-Source Charge Gate-Drain Change Turn-on Delay Time Rise Time 1.2 nC 1.2 1.2 Turn-off Delay Time Fall Time 1.2 1.2 nS Td(off) Tf Ciss Coss Crss pF VDD=325V ID=12A RG=25 Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 VDS=25V f =1.0MHz Source-Drain Diode Diode Forward Voltage Continuous Source Current Pulsed Source Current Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2% 2. Essentially independent of operating temperature. VSD IS ISM Trr Qrr - 590.61 5.62 1.4 12 48 - V A A ns µC IS=12A, VGS=0 Integral Reverse P-N Junction Diode in the MOSFET IS=12A,VGS=0, dlF/dt=100A/µS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Nov-2013 Rev. A Page 2 of 5 SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Nov-2013 Rev. A Page 3 of 5 SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Nov-2013 Rev. A Page 4 of 5 SSRF12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET TYPICAL TEST CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 07-Nov-2013 Rev. A Page 5 of 5 .


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