Document
SSRF12N65SL
Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
ITO-220
B
N
D E
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2
Drain
M
A
H
J K L
Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75
C G F
REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4
L
REF. A B C D E F G
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy
1
Symbol
VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD
Rating
650 ±30 12 9 48 51 0.41 786 -55~150
Unit
V V A A A W mJ ° C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case
Notes: 1. L=30mH,IAS=6.66A, VDD=140V, RG=25Ω, Starting TJ =25° C
RθJA RθJC
120 2.44
° C /W ° C /W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Nov-2013 Rev. A
Page 1 of 5
SSRF12N65SL
Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Min. Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Total Gate Charge
1.2 1.2
Typ.
Max.
Unit
Teat Conditions
BVDSS VGS(th) IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr
650 2 -
0.64 24.15 7.86 7.47 37.67 61.67 80.33 46.67 1476 152 4.5
4 ±100 1 0.8 -
V V nA µA Ω
VGS=0, ID= 250µA VDS=VGS, ID=250µA VGS= ±30V VDS=650V, VGS=0 VGS=10V, ID=6A ID=12A VDS=520V VGS=10V
Gate-Source Charge Gate-Drain Change Turn-on Delay Time Rise Time
1.2
nC
1.2 1.2
Turn-off Delay Time Fall Time
1.2
1.2
nS Td(off) Tf Ciss Coss Crss pF
VDD=325V ID=12A RG=25 Ω
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS =0 VDS=25V f =1.0MHz
Source-Drain Diode Diode Forward Voltage Continuous Source Current Pulsed Source Current Reverse Recovery Time Reverse Recovery Charge
Notes: 1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2% 2. Essentially independent of operating temperature.
VSD IS ISM Trr Qrr
-
590.61 5.62
1.4 12 48 -
V A A ns µC
IS=12A, VGS=0 Integral Reverse P-N Junction Diode in the MOSFET IS=12A,VGS=0, dlF/dt=100A/µS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Nov-2013 Rev. A
Page 2 of 5
SSRF12N65SL
Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Nov-2013 Rev. A
Page 3 of 5
SSRF12N65SL
Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Nov-2013 Rev. A
Page 4 of 5
SSRF12N65SL
Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET
TYPICAL TEST CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Nov-2013 Rev. A
Page 5 of 5
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