N-Channel MOSFET
SSPS920NE
Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Dual-N Channel Mode Power MOSFET
RoHS Compliant Product ...
Description
SSPS920NE
Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Dual-N Channel Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DFN3*3-8PP
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.
REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25 2.3 BSC 0.7 0.9
PACKAGE INFORMATION
Package DFN3*3-8PP MPQ 3K Leader Size 13’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG TA = 25° C TA = 70° C
Ratings
20 ±8 7.1 5.8 40 2.1 1.5 1 -55 ~ 150
Unit
V V A A A A W W ° C
Continuous Source Current (Diode Conduction) Total Power Dissipation
1
Operating Junction & Storage Temperature Range
Thermal Resistance Ratings
Thermal Resistance Junction-ambient (Max.)
1
t≦10 sec Steady State
RθJA
83 120
° C/W ° C/W
Notes: 1. Surfac...
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