IGBT
SEMiX303GB12Vs
SEMiX® 3s
SEMiX303GB12Vs
Features
• Homogeneous Si • VCE(sat) with positive temperature
coefficient • Hi...
Description
SEMiX303GB12Vs
SEMiX® 3s
SEMiX303GB12Vs
Features
Homogeneous Si VCE(sat) with positive temperature
coefficient High short circuit capability UL recognised file no. E63532
Typical Applications*
AC inverter drives UPS Electronic Welding
Remarks
Case temperature limited to TC=125°C max.
Product reliability results are valid for Tj=150°C
Dynamic values apply to the following combination of resistors: RGon,main = 1,0 RGoff,main = 1,0 RG,X = 2,2 RE,X = 1,0
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
Rth(j-c)
IC = 300 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V IC = 300 A VGE = ±15 V RG on = 2.1 RG off = 2.1
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 4200 A/µs Tj = 150 °C di/dtoff = 2600 A/µs
du/dtoff = 6600 V/ Tj = 150 °C µs
...
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