IGBT
SEMiX202GB12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200...
Description
SEMiX202GB12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 310 237 200 600 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 2s
VGES tpsc Tj IF IFnom
Inverse diode
SEMiX202GB12Vs Features
Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532
Tj = 175 °C
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications*
AC inverter drives UPS Electronic Welding
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Remarks
Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C Dynamic values apply to the following combination of resistors: RGon,main = 1,5 RGoff,main = 1,5 RG,X = 2,2 RE,X = 0,5
Conditions
IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A VGE = ±15 V RG on = 2.9 RG off = 2.9 di/dton = 3800 A/µs di/dtoff = 2000 A/µs du/dtoff = 6500 V/ µs per IGBT Tj = 150 °C Tj = 150 °C T...
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