DatasheetsPDF.com

SBESD5301N Dataheets PDF



Part Number SBESD5301N
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description Ultra Low Capacitance ESD Protection
Datasheet SBESD5301N DatasheetSBESD5301N Datasheet (PDF)

SBESD5301N Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SBESD5301N is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discha.

  SBESD5301N   SBESD5301N



Document
SBESD5301N Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SBESD5301N is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The SBESD5301N incorporates one pair of ultra- low capacitance steering diodes plus a TVS diode. The SBESD5301N may be used to provide ESD protection up to ±25kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 5.5A (8/20µs) according to IEC61000-4-5.The SBESD5301N is available in DFN1006-2L package. DFN1006-2L APPLICATIONS Mobile phone PAD Notebook LCD TV Other electronics equipments REF. A B C D Millimeter Min. Max. 0.95 1.05 0.55 0.65 0.2 0.3 0.45 0.55 REF. E F G Millimeter Min. Max. 0.65 TYP. 0.3 0.4 0.00 0.05 FEATURES Ultra-low clamping voltage Low leakage current Small package MARKING 7* * = Date Code Circuit diagram PACKAGE INFORMATION Package DFN1006-2L MPQ 5K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating Air contact IEC 61000-4-2 (ESD) Contact discharge Peak pulse power (tp=8/20us) Peak pulse current (tp=8/20us) Storage temperature range Lead temperature . http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Symbol Value ±25 Unit kV ±25 PPK IPP TJ, TSTG TL 82 5.5 125, -55 ~ 150 260 W A ° C ° C 18-Dec-2013 Rev. A Page 1 of 3 SBESD5301N Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Reveres maximum working voltage Reveres leakage current Reveres breakdown voltage Symbol VRWM IR VBR VF Condition Min. - Typ. 0.1 8 0.9 18 0.57 0.4 Max. 5 100 9 1.2 10 15 0.55 Units V nA V V V Ω V V pF VRWM=5V IT=1mA IT=10mA IPP=16A, tp=100ns 7 0.6 - Forward voltage Clamping voltage 1 1 VCL RDYN Dynamic resistance Clamping Voltage 2 IPP=1A, tp=8/20us VC IPP=5.5A, tp=8/20us - Junction capacitance CJ f=1MHz, VR=0 Note: 1. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to16A. 2. According to IEC61000-4-5. RATINGS AND CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Dec-2013 Rev. A Page 2 of 3 SBESD5301N Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces RATINGS AND CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Dec-2013 Rev. A Page 3 of 3 .


NCV4949A SBESD5301N SBL10U100D1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)