Document
SBESD5301N
Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SBESD5301N is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The SBESD5301N incorporates one pair of ultra- low capacitance steering diodes plus a TVS diode. The SBESD5301N may be used to provide ESD protection up to ±25kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 5.5A (8/20µs) according to IEC61000-4-5.The SBESD5301N is available in DFN1006-2L package.
DFN1006-2L
APPLICATIONS
Mobile phone PAD Notebook LCD TV Other electronics equipments
REF. A B C D Millimeter Min. Max. 0.95 1.05 0.55 0.65 0.2 0.3 0.45 0.55 REF. E F G Millimeter Min. Max. 0.65 TYP. 0.3 0.4 0.00 0.05
FEATURES
Ultra-low clamping voltage Low leakage current Small package
MARKING 7*
* = Date Code
Circuit diagram
PACKAGE INFORMATION
Package DFN1006-2L MPQ 5K Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Air contact IEC 61000-4-2 (ESD) Contact discharge Peak pulse power (tp=8/20us) Peak pulse current (tp=8/20us) Storage temperature range Lead temperature
.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Symbol
Value
±25
Unit
kV
±25 PPK IPP TJ, TSTG TL 82 5.5 125, -55 ~ 150 260 W A ° C ° C
18-Dec-2013 Rev. A
Page 1 of 3
SBESD5301N
Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Reveres maximum working voltage Reveres leakage current Reveres breakdown voltage
Symbol
VRWM IR VBR VF
Condition
Min.
-
Typ.
0.1 8 0.9 18 0.57 0.4
Max.
5 100 9 1.2 10 15 0.55
Units
V nA V V V Ω V V pF
VRWM=5V IT=1mA IT=10mA IPP=16A, tp=100ns
7 0.6 -
Forward voltage Clamping voltage
1 1
VCL RDYN
Dynamic resistance
Clamping Voltage
2
IPP=1A, tp=8/20us VC IPP=5.5A, tp=8/20us
-
Junction capacitance
CJ
f=1MHz, VR=0
Note: 1. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to16A. 2. According to IEC61000-4-5.
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Dec-2013 Rev. A
Page 2 of 3
SBESD5301N
Elektronische Bauelemente 82W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Dec-2013 Rev. A
Page 3 of 3
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