2SC5239
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=...
2SC5239
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5239 900 550 7 3(Pulse6) 1.5 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
(Ta=25°C) 2SC5239 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ V MHz pF
2.5 B C E 12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
V
16.0±0.7 8.8±0.2
a b
ø3.75±0.2
V
1.35
0.65 +0.2 -0.1 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.45 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
3
40 0m A
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const.
I C – V BE Temperature Characteristics (Typical)
(V CE =4V) 5
300mA
200 mA
4 Collector Current I C (A) 0.5 1 5
Collector Current I C (A)
150 mA
2
100m A
1.0 V B E (sat)
3
2
1
I B =40mA
0.5
1 V C E (sat) 0 0.03 0.05 0.1 0 0 0.5 Base-Emittor Voltage V B E (V) 1....