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FC6946010R

Panasonic Semiconductor

Dual N-channel MOS FET

Doc No. TT4-EA-12652 Revision. 2 Product Standards MOS FET FC6946010R FC6946010R Dual N-channel MOS FET Unit : mm Fo...


Panasonic Semiconductor

FC6946010R

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Doc No. TT4-EA-12652 Revision. 2 Product Standards MOS FET FC6946010R FC6946010R Dual N-channel MOS FET Unit : mm For switching  Features  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 1 6 1.6 0.2 5 4 0.13 2 3 1.2 1.6 (0.6) (0.5) (0.5) 1.0  Marking Symbol : V6  Basic Part Number : Dual FK390601 (Individual)  Packaging Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) Panasonic JEITA Code 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1) SSMini6-F3-B SC-107C SOT-666  Absolute Maximum Ratings Ta = 25C Parameter Symbol Drain-source breakdown voltage FET1 Gate-source breakdown voltage FET2 Drain current Pulse drain current Total power dissipation Channel temperature Overall Operating ambient temperature Storage temperature VDSS VGSS ID IDp PT Tch Topr Tstg Rating 60 12 100 200 125 150 -40 to +85 -55 to +150 Unit V V mA mA mW C C C Internal Connection (D1) 6 (G2) 5 (S2) 4 FET1 FET2 1 (S1) 2 (G1) 3 (D2) Pin name 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1) Page 1 of 6 Established : 2010-06-25 Revised : 2013-07-04 Doc No. TT4-EA-12652 Revision. 2 Product Standards MOS FET FC6946010R  Electrical Characteristics Ta = 25C  3C FET1,FET2 Parameter Symbol Drain-source breakdown voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON...




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