MTA65N20J3

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C866J3 Issued Date : 2012.07.05 Revised Date : 2013.12.30 Page No. : 1/9 MTA65N20J3 Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package BVDSS ID RDSON(TYP) VGS=10V, ID=11A VGS=4.5V, ID=5A 200V 24A 74mΩ 74mΩ Equivalent Circuit MTA65N20J3 Outline TO-252(DPAK) G：Gate S：Source D：Drain G D S Ordering Information Device MTA65N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTA65N20J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C866J3 Issued Date : 2012.07.05 Revised Date : 2013.12.30 Page No. : 2/9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH (Note 2) Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% VDS VGS ID ID IDM IAS EAS EAR...