MTA090P02J3

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C322J3 Issued Date : 2014.03.27 Revised Date : Page No. : 1/9 MTA090P02J3 Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating and halogen-free package BVDSS ID @ VGS=-4.5V RDS(ON)@VGS= -4.5V, ID= -6A RDS(ON)@VGS= -2.5V, ID= -3A -20V -10A 78mΩ (typ) 120mΩ (typ) Symbol MTA090P02J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTA090P02J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTA090P02J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Spec. No. : C322J3 Issued Date : 2014.03.27 Revised Date : Page No. : 2/9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-4.5V, TC=25°C Continuous Drain Current @VGS=-4.5V, TC=100°C Continuous Drain Current @VGS=-4.5V, TA=25°C Continuous Drain Current @VGS=-4.5V, TA=70°C Pulsed Drain Current TC=25℃ TC=100℃ Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature VDS VGS ID IDM PD Tj, Tstg -20 ±12 -10 -6.5 -3.2 *3 -2.5 *3 -40 *1 25 *4 10 *4 2.5 *3 1.6 *3 -55~+150 V A W °C The...