MTA25N02J3

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C413J3 Issued Date : 2012.08.01 Revised Date : 2013.12.26 Page No. : 1/9 MTA25N02J3 Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package BVDSS ID VGS=10V, ID=12A RDSON(TYP) VGS=4.5V, ID=6A VGS=2.5V, ID=2A 20V 22A 16mΩ 18mΩ 32mΩ Equivalent Circuit MTA25N02J3 Outline TO-252(DPAK) G G：Gate S：Source D：Drain D S Ordering Information Device MTA25N02J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTA25N02J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Spec. No. : C413J3 Issued Date : 2012.08.01 Revised Date : 2013.12.26 Page No. : 2/9 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range VDS VGS ID IDM Pd Tj, Tstg 20 ±12 22 14 9 5.7 60 15 2.5 -55~+150 V A *1 *3 *2 W °C Thermal Data Parameter Ther...