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MCIRF7N60 Dataheets PDF



Part Number MCIRF7N60
Manufacturers Global Semiconductor
Logo Global Semiconductor
Description POWER MOSFET
Datasheet MCIRF7N60 DatasheetMCIRF7N60 Datasheet (PDF)

MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω Description/ Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation ● Low Power Loss & Low cost ●Fa.

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MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω Description/ Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant ● Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.0 28.0 600 ±30 150 -55 ~150 Units A A V V ℃ ℃ Case Styles 1、 GATE 2、 DRAIN 3、 SOURCE 1、 GATE 2、 DRAIN 3、 SOURCE Ordering Information Part Number MCIRF7N60 MFIRF7N60 Package TO-220 TO-220F Packaging Tube Tube 1 of 7 MFIRF7N60 MCIRF7N60 Absolute Maximum Rating (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed Total Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy Symbol VDS VGS IDM TO-220 PD TO-220F TJ Tstg. EAS 150 -55~150 TO-220 420 mj 45 ℃ ℃ Value 600 ±30 28 125 W Unit V V A TO-220F 420 Electrical Characteristics(Tamb=25℃) Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Drain-Source Diode Forward Voltage Forward Trans conductance Gate-Body Leakage Current(Vds=0V) Static Drain-Source On Resistance Thermal Resistance Junction-Case Symbol BVDSS VGS(TH) IDSS VSD Gfs IGSS RDS(ON) RthJ-C Test Condition VGS=0V,ID=250uA VGS=VDS,ID=250uA VDS=600V, VGS=0V VGS=0V,IS=7A VDS=10V, ID=3.5A VGS=±30V VGS=10V,ID=3.5A TO-220 MIN. 600 2 3 MAX. 4 1 1.4 ±100 1.2 2.0 Unit V V uA V S nA Ω ℃/W TO-220F Dynamic Characteristics(Tamb=25℃) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol CISS COSS CRSS VDS=25V,VGS=0V, F=1.0MHz Test Condition MIN. - - 2.78 TYP. 1000 110 12.6 MAX. - Unit pF pF pF 2 of 7 Rev. 1.0 MFIRF7N60 MCIRF7N60 Switching Characteristics(Tamb=25℃) Characteristic Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Td(on) Tr Td(off) Tf Qg Qgs Qgd VDS=480V,ID=7.0A, VGS=10V VDD=300V,ID=7.0A, RG=25Ω Test Condition MIN. TYP. 20 60 70 60 29 8 14.5 MAX. Unit nS nS nS nS nC nC nC Drain-Source Diode Maximum Ratings And Characteristics(Tamb=25℃) Characteristic Max. Diode Forward Current Max. Pulsed Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol Is ISM Test Condition MIN. VGS=0V,IS=7.0A, VGS=0V,IS=10A, dIF/dt=100A/uS TYP. 350 3.3 MAX. 7.0 28 1.4 Unit A A V nS uC VSD Trr Qrr www.globalsemi-group.com 3 of 7 MFIRF7N60 MCIRF7N60 Characteristics Curve Figure1.Output Characteristic Figure2.Transfer Characteristic Figure3.On Resistance Vs Drain Current Figure4.On Resistance Vs Gate Source Voltage Figure5.On Resistance Vs Junction Temperature Figure6.Capacitanc.


MFIRF7N60 MCIRF7N60 49FCT3807


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