SMK830FC
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
High Voltage : BVDSS=500V(Min.) L...
SMK830FC
Advanced N-Ch Power MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.)
G Package Code TO-220F-3L (C Forming) GD S TO-220F-3L
PIN Connection
D
Ordering Information
Type No. SMK830FC Marking SMK830
S
Marking Diagram
Column 1 : Manufacturer
AUK AUK GYMDD YMDD Δ SMK830 SDB20D45
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed)
*
Symbol
VDSS VGSS ID TC=25℃ TC=100℃ IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
500 30 4.5 2.8 18 30 4.5 472 4.5 5.0 150 -55~150
Unit
V V A A A W A mJ A mJ C C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
4.16 62.5
Unit
℃/W
KSD-T0O061-000
1
SMK830FC
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer con...