SMK630D

SMK630D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features     High Voltage : BVDSS=200V(Min.) Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.) D Ordering Information Type No. SMK630D Marking SMK630 Package Code TO-252 G S TO-252 Marking Diagram SMK 630 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 200 30 9 5.7 36 45 9 232 9 9.5 150 -55~150 Unit V V A A A W A mJ A mJ C Characteristic Thermal resistance Junction-case Junction-ambient ** Symbol Rth(J-C) Rth(J-A) Typ. - Max. 2.77 50 Unit C/W ** When mounted on the minimum pad size recommended (PCB Mount) KSD-T6O014-002 1 SMK630D Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitan...