SMK1060D2

SMK1060D2 Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75Ω(Max.) PIN Connection D D Ordering Information Type No. SMK1060D2 Marking SMK1060 Package Code D2-PAK G S G S D2-PAK Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK1060 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg Rating 600 ±30 10 6.32 40 130 10 490 10 11.6 150 -55~150 Unit V V A A A W A mJ A mJ °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 0.96 62.5 Unit ℃/W KSD-T6S005-001 1 SMK1060D2 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacita...