SMK0860P

Semiconductor SMK0860P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.7pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=1.2Ω(Max.) PIN Connection D G Ordering Information Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 7.5 4.7 30 90 7.5 325 7.5 21.7 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 1.38 62.5 Unit ℃/W KSD-T0P024-000 1 SMK0860P Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th)...