MDF18N50 N-channel MOSFET 500V
MDF18N50
N-Channel MOSFET 500V, 18 A, 0.27Ω
General Description
The MDF18N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF18N50 is suitable device for SMPS, high speed switching and general purpose applications.
Features
VDS = 500V VDS = 550V ID = 18A RDS(ON) ≤ 0.27Ω @ Tjmax @VGS = 10V @VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
G
D
S
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C
o o
Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD Dv/dt EAS TJ, Tstg
o o
Rating 500 550 ±30 18 11 72 37 0.29 4.5 950 -55~150
Unit V V V A A A W W/ oC V/ns mJ
o
ID
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol RθJA RθJC
Rating 62.5 3.4
Unit
o
C/W
Dec 2009. Version 1.4
1
MagnaChip Semiconductor Ltd.
MDF18N50 N-channel MOSFET 500V
Ordering Information
Part Number MDF18N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤18.0A, di/dt≤200A/us, VDD