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MDF18N50 Dataheets PDF



Part Number MDF18N50
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF18N50 DatasheetMDF18N50 Datasheet (PDF)

MDF18N50 N-channel MOSFET 500V MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω General Description The MDF18N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF18N50 is suitable device for SMPS, high speed switching and general purpose applications. Features VDS = 500V VDS = 550V ID = 18A RDS(ON) ≤ 0.27Ω @ Tjmax @VGS = 10V @VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G G .

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MDF18N50 N-channel MOSFET 500V MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω General Description The MDF18N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF18N50 is suitable device for SMPS, high speed switching and general purpose applications. Features VDS = 500V VDS = 550V ID = 18A RDS(ON) ≤ 0.27Ω @ Tjmax @VGS = 10V @VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C o o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD Dv/dt EAS TJ, Tstg o o Rating 500 550 ±30 18 11 72 37 0.29 4.5 950 -55~150 Unit V V V A A A W W/ oC V/ns mJ o ID C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.5 3.4 Unit o C/W Dec 2009. Version 1.4 1 MagnaChip Semiconductor Ltd. MDF18N50 N-channel MOSFET 500V Ordering Information Part Number MDF18N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤18.0A, di/dt≤200A/us, VDD


DEI1045 MDF18N50 MDF18N50TH


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