BDX87B

isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C ·Complement to Type BDX88/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX87 45 BDX87A 60 VCBO Collector-Base Voltage BDX87B 80 BDX87C 100 BDX87 45 VCEO Collector-Emitter Voltage BDX87A 60 BDX87B 80 BDX87C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 12 ICM Collector Current-Peak 18 IB Base Current 200 PC Collector Power Dissipation @ TC=25℃ 120 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX87/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX87 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX87A BDX87B IC= 50mA; IB= 0 BDX87C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA VBE(sat) Base-Emitter...