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FDC8601

Fairchild Semiconductor
Part Number FDC8601
Manufacturer Fairchild Semiconductor
Description N-Channel Shielded Gate PowerTrench MOSFET
Published Aug 3, 2014
Detailed Description FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V...
Datasheet PDF File FDC8601 PDF File

FDC8601
FDC8601

Overview
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.
7 A, 109 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.
7 A „ Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.
1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching per...


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