FDC855N

FDC855N N-Channel, Logic Level, PowerTrench® MOSFET January 2008 FDC855N Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mΩ Features „ Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A „ Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A „ SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick). „ RoHS Compliant tm ® General Description This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical. Application „ Power Management in Notebook, Hard Disk Drive S D D D D D D SuperSOT TM-6 G D D Pin 1 G S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation (Steady State) (Steady State) (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings 30 ±20 6.1 20 1.6 0.8 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 30 78 °C/W Package Marking and Ordering Information Device Marking .855 Device FDC855N Package SuperSOT-6 Reel Size 7” Tape Width 8 mm Quantity ...