Dual N-Channel Shielded Gate PowerTrench MOSFET
FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8602
Dual N-Channel Shielded Gate PowerTrench® MO...
Description
FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8602
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 1.2 A, 350 mΩ Features General Description
This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process
Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant
incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch Synchronous Rectifier
D2 S1 D1 G2 S2 Pin 1 SuperSOT G1
TM
-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 100 ±20 1.2 5 1.5 0.96 0.69 -55 to +150 Units V V A A mJ W °C
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 60 130 °C/W
Package Marking and Ordering Information
Device Marking .862 Device FDC8602 Package SSOT-6
1
Reel Size 7 ’’
Tape Width 8 mm
Qu...
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