IPB107N20N3 G
IPP110N20N3 G IPI110N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent g...
IPB107N20N3 G
IPP110N20N3 G IPI110N20N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max (TO263) ID 200 10.7 88 V mW A
Ideal for high-frequency switching and synchronous rectification Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
Package Marking
PG-TO263-3 107N20N
PG-TO220-3 110N20N
PG-TO262-3 110N20N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 88 63 352 560 10 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C I D=80 A, R GS=25 W
mJ kV/µs V W °C
T C=25 °C
300 -55 ... 175 55/175/56
J-STD20 and JESD22 See figure 3
Rev. 2.3
page 1
2011-07-14
IPB107N20N3 G
IPP110N20N3 G IPI110N20N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.5 62 40 K/W
Electrical characteristics, at T j=25 °C, unless otherwise spec...