BCW60D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; IC = 200 mA; B = 200Hz VCES VCE0 IC Ptot Tj fT F max. max. max. max. max. typ. typ. 32 32 200 250 150 V V mA mW °C 250 MHz 2 dB Continental Device India Limited Data Sheet Page 1 of 3 BCW60A BCW60B BCW60C BCW60D RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter cut–off current VBE = 0; VCE = 32 V VBE = 0; VCE = 32V; Tamb = 150°C Emitter–base cut–off current IC = 0; VEB = 4 V Saturation voltages at IC = 10 mA; IB = 0,25 mA VCES VCE0 VEB0 IC IB Ptot Tstg Tj max. 32 V max. 32 ...