C5336

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number 2SC5336 2SC5336-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel Magazine case 12 mm wide embossed taping Collector face the perforation side of the tape Supplying Form Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 20 12 3.0 100 1.2 150 −65 to +150 Unit V V V mA W °C °C Tj Tstg 2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating) Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10938EJ2V0DS00 (2nd edition) Date Published August 2001 NS CP(K) Printed in Japan The mark shows major revised po...