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NCE55H12
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram
Application
● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking NCE55H12 Device NCE55H12 Device Package TO-220 Reel Size Tape width Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS
Limit
55 ±20 120 85 420 200 1.33 1100 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
ID
ID (100℃)
IDM PD
TJ,TSTG
Wuxi NCE Power Semiconductor Co., Ltd
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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) RθJC
NCE55H12
0.75 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min
55 2 50 -
Typ
65 3 4.1 4900 470 460 20 19 70 30 125 24 49 37 58
Max
1 ±100 4 5.5 1.2 120 -
Unit
V μA nA V mΩ S PF PF PF nS nS nS nS nC nC nC V A nS nC
BVDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS trr Qrr ton
VGS=0V ID=250μA VDS=55V,VGS=0V VGS=±20V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID=40A VDS=25V,ID=40A
VDS=25V,VGS=0V, F=1.0MHz
VDD=30V,ID=2A VGS=10V,RGEN=2.5Ω
-
VDS=30V,ID=30A, VGS=10V
VGS=0V,IS=40A
Tj=25℃,IF=75A,di/dt=100A/μs (Note3)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pul.