K1658

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit. 2.0 ±0.2 0.3 +0.1 –0 0.65 0.65 2.1 ±0.1 1.25 ±0.1 PACKAGE DRAWING (Unit : mm) FEATURES Directly driven by ICs having a 3 V power supply. Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V) G 0.9 ±0.1 Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg 30 ±7 ±100 ±200 150 150 −55 to +80 −55 to +150 V V mA mA mW °C °C °C Total Power Dissipation (TA = 25°C) Channel Temperature Operating Temperature Storage Temperature EQUIVALENT CIRCUIT Drain Gate Note. PW ≤ 10 ms, Duty Cycle ≤ 50% Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional informa...