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ME75N80ED Dataheets PDF



Part Number ME75N80ED
Manufacturers Matsuki
Logo Matsuki
Description N-Channel Enhancement Mode MOSFET
Datasheet ME75N80ED DatasheetME75N80ED Datasheet (PDF)

ME75N80C(-G) N-Channel Enhancement Mode MOSFET VDS=80V RDS(ON), Vgs@10V,Ids@40A = 11mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View e Ordering Information: ME75N80ED (Pb-free) ME75N80ED-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Source-drain Curren.

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ME75N80C(-G) N-Channel Enhancement Mode MOSFET VDS=80V RDS(ON), Vgs@10V,Ids@40A = 11mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View e Ordering Information: ME75N80ED (Pb-free) ME75N80ED-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Source-drain Current Power Dissipation TC=25℃ TA=25℃ TC=25℃ TC=100℃ Symbol VDSS VGSS ID IDM ISD PD TJ, Tstg EAS RθJA RθJC Limit 80 ±20 75 60 300 75 75 4 -55 to 175 400 T≦10 sec Steady State 2 7.3 37 Unit V V A A A W ℃ mJ Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulseb Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case a. Pulse width limited by safe operating area b. Starting Tj=25℃, ID=30A, VDD=37.5V ℃/W Jan, 2009 – Version 4.3 01 ME75N80C(-G) N-Channel Enhancement Mode MOSFET Electrical Characteristics Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance* Forward Transconductance* Diode Forward Voltage * VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V VDS=Max Rating, VGS=0V VGS=10V, ID=40A VDS=15V, ID=40A ISD=25A, VGS=0V 8.5 10 1.5 80 4.0 6.5 ±100 1 11 V V nA μA mΩ S V Parameter Limit Min Typ Max Unit GFS VSD DYNAMIC Qg Qgs Qgd Rg Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS =10V, RL=15Ω VDD=30V, RG=10Ω f=1MHz VDS=20V, VGS=0V, f=1MHz VDD=60V, VGS=10V, ID=75A 120 54 38 2.3 7400 450 140 80 37 140 27 ns pF Ω nC td(on) tr td(off) tf Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Jan, 2009 – Version 4.3 02 ME75N80C(-G) N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) Jan, 2009 – Version 4.3 03 ME75N80C(-G) N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) Jan, 2009 – Version 4.3 04 ME75N80C(-G) N-Channel Enhancement Mode MOSFET TO-220 Package Outline SYMBOL A A1 A2 b c D D1 D2 E E1 e H1 L φP Q b2 L1 MILLIMETERS (mm) MIN 3.500 1.000 2.000 0.500 0.350 14.00 8.382 12.00 9.600 6.858 2.540 BSC 5.500 12.50 3.810 2.540 1.100 7.50 15.00 3.860 3.048 1.80 7.00 MAX 4.90 1.40 3.00 1.00 0.65 16.50 9.017 13.00 10.70 8.890 Jan, 2009 – Version 4.3 05 .


ME75N80C ME75N80ED ME75N80ED-G


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