Document
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
VDS=80V RDS(ON), Vgs@10V,Ids@40A = 11mΩ
FEATURES
Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control
PIN
CONFIGURATION
(TO-220) Top View
e Ordering Information: ME75N80ED (Pb-free)
ME75N80ED-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Source-drain Current Power Dissipation TC=25℃ TA=25℃ TC=25℃ TC=100℃
Symbol
VDSS VGSS ID IDM ISD PD TJ, Tstg EAS RθJA RθJC
Limit
80 ±20 75 60 300 75 75 4 -55 to 175 400 T≦10 sec Steady State 2 7.3 37
Unit
V V A A A W ℃ mJ
Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulseb Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case a. Pulse width limited by safe operating area b. Starting Tj=25℃, ID=30A, VDD=37.5V
℃/W
Jan, 2009 – Version 4.3
01
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
Symbol
STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance* Forward Transconductance* Diode Forward Voltage * VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V VDS=Max Rating, VGS=0V VGS=10V, ID=40A VDS=15V, ID=40A ISD=25A, VGS=0V 8.5 10 1.5 80 4.0 6.5 ±100 1 11 V V nA μA mΩ S V
Parameter
Limit
Min
Typ
Max
Unit
GFS
VSD DYNAMIC Qg Qgs Qgd Rg Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS =10V, RL=15Ω VDD=30V, RG=10Ω f=1MHz VDS=20V, VGS=0V, f=1MHz VDD=60V, VGS=10V, ID=75A
120 54 38 2.3 7400 450 140 80 37 140 27 ns pF Ω nC
td(on) tr td(off) tf
Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Jan, 2009 – Version 4.3
02
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)
Jan, 2009 – Version 4.3
03
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)
Jan, 2009 – Version 4.3
04
ME75N80C(-G)
N-Channel Enhancement Mode MOSFET
TO-220 Package Outline
SYMBOL A A1 A2 b c D D1 D2 E E1 e H1 L φP Q b2 L1
MILLIMETERS (mm) MIN 3.500 1.000 2.000 0.500 0.350 14.00 8.382 12.00 9.600 6.858 2.540 BSC 5.500 12.50 3.810 2.540 1.100 7.50 15.00 3.860 3.048 1.80 7.00 MAX 4.90 1.40 3.00 1.00 0.65 16.50 9.017 13.00 10.70 8.890
Jan, 2009 – Version 4.3
05
.