Green Product
STU/D15L01
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect...
Green Product
STU/D15L01
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
15A
R DS(ON) (m Ω) Max
145 @ VGS=10V 195 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. Halogen free.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c d ac
Limit 100 ±20 TC=25°C TC=70°C 14.7 13.6 59 25 TC=25°C TC=70°C 50 32 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case
a a
3.6 50
°C/W °C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
May,16,2014
1
www.samhop.com.tw
STU/D15L01
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VD...
