BSC032NE2LS

OptiMOSTM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS=4.5 V 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 BSC032NE2LS Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) 25 V 3.2 mW 84 A 9.4 nC 16 nC PG-TDSON-8 Type BSC032NE2LS Package PG-TDSON-8 Marking 032NE2LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS V GS V GS=10 V, T A=25 °C, R thJA=50 K/W2) T C=25 °C T C=25 °C I D=20 A, R GS=25 W Value 84 53 68 43 22 336 45 20 ±20 Unit A mJ V Rev. 2.2 page 1 2013-04-29 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSC032NE2LS Value 37 2.5 -55 ... 150 55/150/56 Unit W °C Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA top 6 cm2 cooling area2) Electrical characteristics, at T j=25...