BSC030P03NS3 G
OptiMOSTM P3 Power-Transistor
Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for...
BSC030P03NS3 G
OptiMOSTM P3 Power-
Transistor
Features single P-Channel in SuperSO8 Qualified according JEDEC 1) for target applications V GS=25 V, specially suited for notebook applications Pb-free; RoHS compliant ESD > 4 kV applications: battery management, load switching Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID -30 3.0 -100 PG-TDSON-8 V mΩ A
Type
Package
Marking 030P3NS
Lead free Yes
Halogen free Yes
Packing dry
BSC030P03NS3 G PG-TDSON-8
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T C =25 °C T A=25 °C2) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1
1)
Value -100 -100 -25.4 -200 345 ±25 125 2.5 -55 ... 150
Unit A
T C=25 °C3) I D=-100 A, R GS=25 Ω
mJ V W
T j, T stg JESD22-A114 HBM
°C
class 3 (> 4KV) 260 °C 55/150/56
J-STD20 and JESD22
Rev. 2.1
page 1
2009-11-16
BSC030P03NS3 G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) Values typ. max. Unit
-
-
1.0 50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS...
