BSC031N06NS3G

Type BSC031N06NS3 G OptiMOSTM3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSC031N06NS3 G Product Summary V DS R DS(on),max ID 60 3.1 100 V mΩ A Package Marking PG-TDSON-8 031N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C V GS=10 V, T C=25 °C, R thJA =50K/W 3) Pulsed drain current4) Avalanche energy, single pulse5) Gate source voltage 1) 2) 3) Value 100 100 Unit A 22 400 298 ±20 mJ V I D,pulse E AS V GS T C=25 °C I D=50 A, R GS=25 Ω J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.9 K/W the chip is able to carry 165A. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) See figure 3 for more detailed information 5) See figure 13 for more detailed information Rev.2.3 page 1 2009-10-22 BSC031N06NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=50 K/W 3) Operating and ...