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K3511
MOS Field Effect Transistor
Description
SMD Type MOSFET MOS Field Effect
Transistor
2SK3511 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-...
Kexin
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