MDF7N50

MDF7N50 N-channel MOSFET 500V MDF7N50 N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDF7N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 7.0A  RDS(ON) ≤ 0.9Ω Applications  Power Supply  HID  Lighting @ VGS = 10V @ VGS = 10V D G DS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) G S TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 7.0 4.2 28 36 0.29 4.5 270 -55~150 Unit V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 3.5 Unit oC/W Jan. 2021. Version 1.3 1 Magnachip Semiconductor Ltd. MDF7N50 N-channel MOSFET 500V Ordering Information Part Number MDF7N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cu...